| PART |
Description |
Maker |
| TN6Q04 |
ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD
|
Sanyo Semicon Device
|
| TND516SS |
ExPD(Excellent Power Device) Single-phase High Side Drive Application
|
http://
|
| TN5D41A |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| TN7D51 |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type)
|
Sanyo Semicon Device
|
| TND027MP |
Excellent Power Device
|
Sanyo Semicon Device
|
| TND524VS TND524VS-TL-H |
Excellent Power Device Single-phase High Side Drive, Single VEC8
|
ON Semiconductor
|
| IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| KI5935DC |
TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint
|
TY Semiconductor Co., Ltd
|
| SCRH6D28-6R0 SCRH6D28-100 |
Magnetically shielded construction, Excellent Power Density
|
List of Unclassifed Manufacturers
|
| 160MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| ACT200A |
miniature SMD Watch Crystal with excellent low power consumption,
|
Advanced Crystal Technology
|
| IPI111N15N3G IPB108N15N3G IPP111N15N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
